Channel Type = N Maximum Continuous Drain Current = 7 A Maximum Drain Source Voltage = 600 V Maximum Drain Source Resistance = 600 mΩ Minimum Gate Threshold Voltage = 3V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-220AB Mounting Type = Through Hole Transistor Configuration = Single Channel Mode = Enhancement Category = Power MOSFET Maximum Power Dissipation = 83 W Maximum Operating Temperature = +150 °C
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor. Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability. Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability. |