BS170_D26Z N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 Fairchild

Channel Type = N
Maximum Continuous Drain Current = 500 mA
Maximum Drain Source Voltage = 60 V
Maximum Drain Source Resistance = 5 Ω
Minimum Gate Threshold Voltage = 0.8V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-92
Mounting Type = Through Hole
Transistor Configuration = Single
Channel Mode = Enhancement
Category = Power MOSFET
Maximum Power Dissipation = 830 mW
Number of Elements per Chip = 1

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.